Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/100891
Author(s): Daniel José da Silva
Title: Lattice location of transition metals in silicon by means of emission channeling
Issue Date: 2014-12-19
Subject: Ciências exactas e naturais
Natural sciences
Scientific areas: Ciências exactas e naturais
Natural sciences
TID identifier: 101357656
URI: https://repositorio-aberto.up.pt/handle/10216/100891
Document Type: Tese
Rights: openAccess
Appears in Collections:FCUP - Tese

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