Please use this identifier to cite or link to this item: http://hdl.handle.net/10216/100891
Author(s): Daniel José da Silva
Title: Lattice location of transition metals in silicon by means of emission channeling
Issue Date: 2014-12-19
Subject: Ciências exactas e naturais
Call Number: 33698
URI: http://hdl.handle.net/10216/100891
Document Type: Tese
Rights: embargoedAccess
Embargo End Date: 2017-12-18
Appears in Collections:FCUP - Tese

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