1. Repositório Aberto da Universidade do Porto
  2. FCUP - Faculdade de Ciências
  3. FCUP - Tese
Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/100891
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dc.creatorDaniel José da Silva
dc.date.accessioned2022-09-14T04:34:28Z-
dc.date.available2022-09-14T04:34:28Z-
dc.date.issued2014-12-19
dc.date.submitted2015-01-08
dc.identifier.othersigarra:33698
dc.identifier.urihttps://hdl.handle.net/10216/100891-
dc.language.isoeng
dc.rightsopenAccess
dc.subjectCiências exactas e naturais
dc.subjectNatural sciences
dc.titleLattice location of transition metals in silicon by means of emission channeling
dc.typeTese
dc.contributor.uportoFaculdade de Ciências
dc.identifier.tid101357656
dc.subject.fosCiências exactas e naturais
dc.subject.fosNatural sciences
thesis.degree.disciplineDoutoramento em Física
thesis.degree.grantorFaculdade de Ciências
thesis.degree.grantorUniversidade do Porto
thesis.degree.level2
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