Please use this identifier to cite or link to this item:
https://hdl.handle.net/10216/277
Author(s): | Rui Chibante Armando Araújo Adriano Carvalho |
Title: | A FEM punch-through IGBT model using an efficient parameter extraction method |
Issue Date: | 2005 |
Abstract: | A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results. |
Subject: | Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática Electrical engineering, Electrical engineering, Electronic engineering, Information engineering |
Scientific areas: | Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática Engineering and technology::Electrical engineering, Electronic engineering, Information engineering |
URI: | https://repositorio-aberto.up.pt/handle/10216/277 |
Source: | IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3 |
Document Type: | Artigo em Livro de Atas de Conferência Internacional |
Rights: | openAccess |
License: | https://creativecommons.org/licenses/by-nc/4.0/ |
Appears in Collections: | FEUP - Artigo em Livro de Atas de Conferência Internacional |
This item is licensed under a Creative Commons License