Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/277
Author(s): Rui Chibante
Armando Araújo
Adriano Carvalho
Title: A FEM punch-through IGBT model using an efficient parameter extraction method
Issue Date: 2005
Abstract: A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results.
Subject: Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
Engineering and technology::Electrical engineering, Electronic engineering, Information engineering
URI: https://repositorio-aberto.up.pt/handle/10216/277
Source: IECON 2005: THIRTY-FIRST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-3
Document Type: Artigo em Livro de Atas de Conferência Internacional
Rights: openAccess
License: https://creativecommons.org/licenses/by-nc/4.0/
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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