Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/586
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dc.creatorArmando Araújo
dc.creatorAdriano Carvalho
dc.creatorJ. L. Martins de Carvalho
dc.date.accessioned2022-09-11T23:06:03Z-
dc.date.available2022-09-11T23:06:03Z-
dc.date.issued1997
dc.identifier.othersigarra:55612
dc.identifier.urihttps://hdl.handle.net/10216/586-
dc.description.abstractA physics based model for the power p-i-n diode is implemented into the general circuit simulation package SPICE. This model based on a variational formulation and finite element solution of the semiconductor equations accurately describes the forward and reverse recovery as well as the conduction behavior, The procedure used to implement the resulting model into SPICE is described, The simulations are finally compared with known experiments for demonstration of its effectiveness.
dc.language.isoeng
dc.relation.ispartofProceedings of the IEEE International Symposium on Industrial Electronics
dc.rightsrestrictedAccess
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/
dc.subjectEngenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
dc.subjectElectrical engineering, Electrical engineering, Electronic engineering, Information engineering
dc.titlePower P-I-N diode modeling using SPICE
dc.typeArtigo em Livro de Atas de Conferência Internacional
dc.contributor.uportoFaculdade de Engenharia
dc.identifier.doi10.1109/ISIE.1997.648937
dc.identifier.authenticusP-001-CKH
dc.subject.fosCiências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
dc.subject.fosEngineering and technology::Electrical engineering, Electronic engineering, Information engineering
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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