Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/57161
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dc.creatorAndré Moreira
dc.creatorJosé Machado da Silva
dc.creatorGuoquiao Tao
dc.date.accessioned2019-02-01T10:00:22Z-
dc.date.available2019-02-01T10:00:22Z-
dc.date.issued2009
dc.identifier.othersigarra:61024
dc.identifier.urihttps://repositorio-aberto.up.pt/handle/10216/57161-
dc.description.abstractIn this paper, we report the impact of the parasitic capacitances in the modeling and analysis of advanced floating gate (FG) non-volatile memory (NVM) devices, especially on the coupling ratio. Due to the poor accuracy of the existing capacitance model when compared to practice, an approach to include the parasitic capacitances has been established. Measurement results from two transistor (2T) Fowler-Nordheim (FN) tunneling operated flash memory show a good improvement in the model accuracy. The parasitic capacitances depend very much on the floating gate dimension, and the spacing to the neighboring elements in the flash cell array. The growing influence of the parasitic capacitances and the subsequent degradation of the existing model accuracy can be expected for the cells dimensions in future process technologies. With the accurate calculation method for the parasitic capacitances proposed in this paper, the cell characteristics can be more accurately modeled, andthe degradation of the cell can be accurately studied.
dc.language.isoeng
dc.relation.ispartofProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
dc.rightsopenAccess
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/
dc.subjectNanotecnologia, Engenharia electrónica, Engenharia electrotécnica, electrónica e informática
dc.subjectNanotechonology, Electronic engineering, Electrical engineering, Electronic engineering, Information engineering
dc.titleInfluence of parasitic capacitances in modeling and analysis of advanced floating gate memory devices
dc.typeArtigo em Livro de Atas de Conferência Internacional
dc.contributor.uportoFaculdade de Engenharia
dc.identifier.doi10.1109/ipfa.2009.5232645
dc.identifier.authenticusP-007-RRD
dc.subject.fosCiências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
dc.subject.fosEngineering and technology::Electrical engineering, Electronic engineering, Information engineering
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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