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Author(s): Armando Araújo
Adriano Carvalho
J. L. Martins de Carvalho
Title: A method for bipolar semiconductor device modeling implementable in circuit simulators
Issue Date: 1998
Abstract: This paper presents a method for modeling power semiconductor devices based on the unidimensional solution of the diffusion equation describing the behavior of charge in low doped zones. The method uses a variational approach, and the finite elements method, which allows to transform a partial differential equation in space and time into a finite set of differential equations in time only. As the used functional is quadratic the matrices associated with this set of differential equations are tridiagonal and symmetric which enables a network analogy and the solution to be tried oriented to circuit simulator. This electrical network model is then linked with other circuits, modeling the remaining zones of the device, in order to make a circuit representation of the same one. Modular models for the circuit simulation of generic p-i-n diodes and bipolar junction transistors are presented as well as some simulation results.
Subject: Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
Engineering and technology::Electrical engineering, Electronic engineering, Information engineering
Source: Proceedings of the 5th IEEE International Conference on Electronics, Circuits and Systems
Document Type: Artigo em Livro de Atas de Conferência Internacional
Rights: restrictedAccess
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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