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Author(s): Rui Chibante
Armando Araújo
Adriano Carvalho
Title: Modeling buffer layer IGBTs with an efficient parameter extraction method
Issue Date: 2005
Abstract: A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results.
Subject: Engenharia electrotécnica, Engenharia do ambiente
Electrical engineering, Environmental engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia do ambiente
Engineering and technology::Environmental engineering
Source: 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3
Document Type: Artigo em Livro de Atas de Conferência Internacional
Rights: restrictedAccess
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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