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https://hdl.handle.net/10216/275| Author(s): | Rui Chibante Armando Araújo Adriano Carvalho |
| Title: | Modeling buffer layer IGBTs with an efficient parameter extraction method |
| Issue Date: | 2005 |
| Abstract: | A Finite Element physics-based punch-through IGBT model is presented, as well as its porting into standard circuit simulator SPICE. Developed model is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs, from which charge carrier distribution is obtained. Implementing the model in a circuit simulator is made by means of an electrical analogy with the resulting system of ODEs. Other parts of the devices are modeled using conventional methods. The paper also discusses a parameter extraction procedure using an optimisation algorithm in order to get an efficient extraction of large number of parameters needed for physics-based IGBT models. Model is validated comparing experimental and simulated results. |
| Subject: | Engenharia electrotécnica, Engenharia do ambiente Electrical engineering, Environmental engineering |
| Scientific areas: | Ciências da engenharia e tecnologias::Engenharia do ambiente Engineering and technology::Environmental engineering |
| DOI: | 10.1109/pesc.2005.1581937 |
| URI: | https://hdl.handle.net/10216/275 |
| Source: | 2005 IEEE 36th Power Electronic Specialists Conference (PESC), Vols 1-3 |
| Document Type: | Artigo em Livro de Atas de Conferência Internacional |
| Rights: | restrictedAccess |
| License: | https://creativecommons.org/licenses/by-nc/4.0/ |
| Appears in Collections: | FEUP - Artigo em Livro de Atas de Conferência Internacional |
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| File | Description | Size | Format | |
|---|---|---|---|---|
| 56088.pdf Restricted Access | 489.76 kB | Adobe PDF | View/Open |
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