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Author(s): Rui Filipe Marques Chibante
Armando Luís Sousa Araújo
Adriano da Silva Carvalho
Title: A new physics based SPICE model for NPT IGBT
Issue Date: 2003
Abstract: A physics based, Non-Punch-Through, Insulated Gate Bipolar Transistor (NPT-IGBT) model is presented, as well as its porting into available circuit simulator SPICE. The developed model results in a system of ODEs, from which time/space hole/electron distribution is obtained, and is based on solution of ambipolar diffusion equation (ADE) trough a variational formulation, with posterior implementation using one-dimensional simplex finite elements. Other parts of the device are modeled using standard methods. Thus, this new hybrid model combines either advantages of numerical methods or mathematical, through modeling charge carrier behavior with high accuracy even maintaining low execution times. Implementation of the model in a general circuit simulator is made by means of an electrical analogy with the resulting system of ODEs.
Subject: Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
Engineering and technology::Electrical engineering, Electronic engineering, Information engineering
Source: The 29th Annual Conference of the IEEE Industrial Electronics Society
Document Type: Artigo em Livro de Atas de Conferência Internacional
Rights: restrictedAccess
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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