Please use this identifier to cite or link to this item:
Author(s): Rui Filipe Marques Chibante
Armando Luís Sousa Araújo
Adriano da Silva Carvalho
Title: A simple and efficient parameter extraction procedure for physics based IGBT models
Issue Date: 2004
Abstract: Extraction of parameters for models of power semiconductors is a need for researchers working with development of power circuits. One of the drawbacks of physics based models is how to extract the numerous parameters to describe the model. Different approaches have been taken, most of them cumbersome to be solved.This paper presents a simple and accurate method of parameter extraction for physics based IGBT models. The procedure, based on an optimization algorithm (simulated annealing), is easy to implement and is efficient for extraction of a large number of parameters needed for physics based IGBT models, only requiring some experimental points of DC and resistive load characteristics. It is validated by comparing experimental and simulated results, at various operating conditions, using a Finite Element, physics based, IGBT model.
Subject: Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electrical engineering, Electronic engineering, Information engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
Engineering and technology::Electrical engineering, Electronic engineering, Information engineering
Source: EPE-PEMC, 11th International POWER ELECTRONICS and MOTION CONTROL Conference
Document Type: Artigo em Livro de Atas de Conferência Internacional
Rights: restrictedAccess
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

Files in This Item:
File Description SizeFormat 
  Restricted Access
422.07 kBAdobe PDF    Request a copy from the Author(s)

This item is licensed under a Creative Commons License Creative Commons