Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/129478
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dc.creatorMd. Hasibul Alam
dc.creatorZifan Xu
dc.creatorSayema Chowdhury
dc.creatorZhanzhi Jiang
dc.creatorDeepyanti Taneja
dc.creatorSanjay K. Banerjee
dc.creatorKeji Lai
dc.creatorHelena Braga
dc.creatorDeji Akinwande
dc.date.accessioned2022-09-16T10:57:41Z-
dc.date.available2022-09-16T10:57:41Z-
dc.date.issued2020
dc.identifier.othersigarra:423777
dc.identifier.urihttps://hdl.handle.net/10216/129478-
dc.description.abstractIonic liquids/gels have been used to realize field-effect-transistors (FETs) with two dimensional (2D) transition metal dichalcogenides (TMDs) [1]. Although near ideal gating has been reported with this biasing scheme, it suffers from several issues such as, liquid nature of the electrolyte, its humidity dependency and freezing at low temperatures [2]. Recently, air-stable solid electrolytes have been developed, thanks to the advancement in battery technology [3]. Although insulator-to-metal transition has been reported, the realization of 2D TMD FETs on solid electrolytic substrate has not been reported so far to the best of our knowledge [4]. In this work, we demonstrate a lithium ion (Liion) solid electrolytic substrate based TMD transistor and a CMOS amplifier, with near ideal gating efficiency reaching 60 mV/dec subthreshold swing, and amplifier gain ~34, the highest among comparable inverter
dc.language.isoeng
dc.relation.ispartof78th Device Research Conference
dc.rightsopenAccess
dc.titleSolid Electrolytic Substrates for High Performance Transistors and Circuits
dc.typeArtigo em Livro de Atas de Conferência Internacional
dc.contributor.uportoFaculdade de Engenharia
Appears in Collections:FEUP - Artigo em Livro de Atas de Conferência Internacional

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