Utilize este identificador para referenciar este registo: https://hdl.handle.net/10216/103627
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Campo DCValorIdioma
dc.creatorJosé C. S. Costa
dc.creatorRicardo J. S. Taveira
dc.creatorCarlos F. R. A. C. Lima
dc.creatorAdélio Mendes
dc.creatorLuís M. N. B. F. Santos
dc.date.accessioned2022-09-13T14:04:19Z-
dc.date.available2022-09-13T14:04:19Z-
dc.date.issued2016
dc.identifier.issn0925-3467
dc.identifier.othersigarra:145500
dc.identifier.urihttps://hdl.handle.net/10216/103627-
dc.description.abstractUV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic p-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMOeLUMO energy gaps of p-conjugated systems were evaluated by UVeVis spectroscopy in CHCl3 solution for a large number of relevant p-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, a-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (a-2T, b-2T, a-3T, b-3T, a-4T and a-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UVeVis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.
dc.language.isoeng
dc.relationinfo:eu-repo/grantAgreement/FCT - Fundação para a Ciência e a Tecnologia/Projetos Estratégicos/UID/EQU/00511/2013 - POCI-01-0145-FEDER-006939/Laboratório de Engenharia de Processos, Ambiente, Biotecnologia e Energia/LEPABE
dc.rightsrestrictedAccess
dc.subjectCiências Tecnológicas
dc.subjectTechnological sciences
dc.titleOptical band gaps of organic semiconductor materials
dc.typeArtigo em Revista Científica Internacional
dc.contributor.uportoFaculdade de Engenharia
dc.contributor.uportoFaculdade de Ciências
dc.identifier.doi10.1016/j.optmat.2016.03.041
dc.identifier.authenticusP-00K-FSV
Aparece nas coleções:FCUP - Artigo em Revista Científica Internacional
FEUP - Artigo em Revista Científica Internacional

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