Please use this identifier to cite or link to this item: https://hdl.handle.net/10216/116214
Author(s): F. C. Correia
N. Bundaleski
Orlando M. N. D Teodoro
M. R. Correia
L. Rebouta
Adélio Mendes
C. J. Tavares
Title: XPS analysis of ZnO:Ga films deposited by magnetron sputtering: Substrate bias effect
Issue Date: 2018
Abstract: This work focuses on X-ray photoelectron spectroscopy (XPS) and combined Raman and photoluminescence experiments performed on similar to 500nm thick ZnO:Ga films deposited by magnetron sputtering. The substrate bias voltage applied during the deposition was varied between OV (grounded) and -120V in order to study the effect of Ga-doping on the ZnO wurtzite structure of the films and its electrical properties, when using a fixed doped composition of Ga2O3 (4.5 wt.%) in the ZnO sputtering target. XPS analysis revealed that ZnO dominates in all samples, while the Ga amount is the highest (similar to 2.9 at.%) for a substrate bias polarization of -60 V, diminishing substantially for either decreasing or increasing substrate polarizations. This increase in Ga concentration is responsible for the enhancement of electronic transport properties, resulting in a minimum electrical resistivity of similar to 300 mu Omega center dot cm. Moreover, the atomic layers closer to the surface are deficient in zinc for higher bias, due to the etching effect of Ar+ ions and subsequent Zn re-evaporation. From the Raman experiments, it was observed that the dynamics of the A(1) and E-1 phonons correlates with the decrease of the electrical resistivity. Photoluminescence studies revealed two broad bands, being one near the ZnO near-band-edge (3.4 eV) and another at higher energies (similar to 3.6 eV). The band centered at higher energies is more prominent for the case of the more electrically-conductive films, and is ascribed to electron transitions from the conduction band to single ionized oxygen vacancies. The lifetime of the polar-nature longitudinal optical phonons is in the range of 0.1-0.2 ps, which is quite small due to the frohlich interactions with gallium dopant atoms and other defects.
URI: https://hdl.handle.net/10216/116214
Related Information: info:eu-repo/grantAgreement/Agência Nacional de Inovação S.A./P2020|COMPETE - Projetos em Copromoção/POCI-01-0247-FEDER-017796/Novos avanços tecnológicos para a terceira geração de células solaressensibilizadas com perovskita/WINPSC
Document Type: Artigo em Revista Científica Internacional
Rights: restrictedAccess
Appears in Collections:FEUP - Artigo em Revista Científica Internacional

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