Please use this identifier to cite or link to this item:
https://hdl.handle.net/10216/101618
Author(s): | R. Chibante A. Araújo A. Carvalho |
Title: | A new approach for physical-based modelling of bipolar power semiconductor devices |
Issue Date: | 2008 |
Abstract: | This paper presents a hybrid approach for accurate modelling and simulation of power bipolar semiconductor devices. Model's core is a numerical module that solves ambipolar diffusion equation (ADE) trough a variational formulation followed by an approximate solution with a finite element approach. The approach enables easy implementation of physics-based power semiconductor models into standard SPICE circuit simulators. Implementation is done trough a set of current controlled RC nets describing charge carrier distribution in low-doped zone. Other zones of devices are modelled with classical methods in an analytical module. With this hybrid approach it is possible to describe dynamic and static device behaviour with good accuracy while maintaining low execution times. The methodology is presented and applied for power p-i-n diodes, power bipolar junction transistors and insulated gate bipolar transistors. Models are validated comparing experimental and simulated results. |
Subject: | Engenharia electrotécnica, Engenharia electrotécnica, electrónica e informática Electrical engineering, Electrical engineering, Electronic engineering, Information engineering |
Scientific areas: | Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática Engineering and technology::Electrical engineering, Electronic engineering, Information engineering |
URI: | https://hdl.handle.net/10216/101618 |
Document Type: | Artigo em Revista Científica Internacional |
Rights: | restrictedAccess |
Appears in Collections: | FEUP - Artigo em Revista Científica Internacional |
Files in This Item:
File | Description | Size | Format | |
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58466.pdf Restricted Access | 697.7 kB | Adobe PDF | Request a copy from the Author(s) |
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