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Author(s): Henrique Manuel Dias Cavadas
Title: Process and Temperature Compensation of CMOS Ring Oscillators
Issue Date: 2016-07-25
Description: In order to compensate RO's process, temperature and voltage variations (PVT) several CMOS effects have been studied such as VT sensing and Zero Temperature Coefficient (ZTC). A single-ended RO topology was analysed taking into consideration theoretical studies, PVT behavior and sensitivity to control and supply voltage. The techniques used to obtain these characterizations helped to obtain, organize and classify data in a efficient and scalable manner. The modified false-position method was implemented to characterize the RO PVT behavior efficiently for a given target oscillation frequency, allowing to explore different RO's and specific transistor influence. For classification a coefficient of determination, pronounced R squared, was implemented allowing to know the goodness of fit of a line for instance RO's control voltage, and find straight, parallel and evenly spaced lines. Analysis of the supply and control voltage sensitivity to a variation was made allowing good error prediction and a clear way for correctly knowing how to compensate variations. An ideal topology was developed for matching two sets of those lines with similar features on different circuits, containing gain, offset and coefficient of temperature.The final topology includes two Bandgap voltage references, a simple VT extractor, a Differential Amplifier and a single-end RO.
Subject: Engenharia electrotécnica, electrónica e informática
Electrical engineering, Electronic engineering, Information engineering
Scientific areas: Ciências da engenharia e tecnologias::Engenharia electrotécnica, electrónica e informática
Engineering and technology::Electrical engineering, Electronic engineering, Information engineering
TID identifier: 201798247
Document Type: Dissertação
Rights: openAccess
Appears in Collections:FEUP - Dissertação

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